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mm3z5221b~mm3z5267b silicon planar zener diodes features ? total power dissipation: max. 300 mw ? small plastic package suitable for surface mounted design ? tolerance approximately 5% absolute maximum ratings (t a = 25 o c) parameter symbol value unit power dissipation p tot 300 mw junction temperature t j 150 o c storage temperature range t stg - 55 to + 150 o c characteristics at t a = 25 o c parameter symbol max. unit thermal resistance junction to ambient air r ja 417 o c/w forward voltage at i f = 10 ma v f 0.9 v anode 2 top view simplified outline sod-323 and symbol 1 2 pinning 1 pin cathode description 1 date:2011/05 www.htsemi.com semiconductor jinyu
characteristics at t a = 25 o c type marking code zener voltage range 1) dynamic impedance reverse current v znom l zt for v zt z zt z zk at i zk i r at v r v ma v ? (max.) ? (max.) ma a (max.) v mm3z5221b a1 2.4 20 2. 28?2.52 30 1200 0.25 100 1 mm3z5223b b1 2.7 20 2. 57?2.84 30 1300 0.25 75 1 MM3Z5225B c1 3.0 20 2. 85?3.15 29 1600 0.25 50 1 mm3z5226b d1 3.3 20 3. 14?3.47 28 1600 0.25 25 1 mm3z5227b e1 3.6 20 3. 42?3.78 24 1700 0.25 15 1 mm3z5228b f1 3.9 20 3. 71?4.1 23 1900 0.25 10 1 mm3z5229b h1 4.3 20 4. 09?4.52 22 2000 0.25 5 1 mm3z5230b j1 4.7 20 4. 47?4.94 19 1900 0.25 5 2 mm3z5231b k1 5.1 20 4. 85?5.36 17 1600 0.25 5 2 mm3z5232b m1 5.6 20 5. 32?5.88 11 1600 0.25 5 3 mm3z5234b n1 6.2 20 5. 89?6.51 7 1000 0.25 5 4 mm3z5235b p1 6.8 20 6. 46?7.14 5 750 0.25 3 5 mm3z5236b r1 7.5 20 7. 13?7.88 6 500 0.25 3 6 mm3z5237b x1 8.2 20 7. 79?8.61 8 500 0.25 3 6.5 mm3z5239b y1 9.1 20 8. 65?9.56 10 600 0.25 3 7 mm3z5240b z1 10 20 9.5?10.5 17 600 0.25 3 8 mm3z5241b a2 11 20 10.45? 11.55 22 600 0.25 2 8.4 mm3z5242b b2 12 20 11.4? 12.6 30 600 0.25 1 9.1 mm3z5243b c2 13 9.5 12.35? 13.65 13 600 0.25 0.5 9.9 mm3z5245b d2 15 8.5 14. 25?15.75 16 600 0.25 0.1 11 mm3z5246b e2 16 7.8 15. 2?16.8 17 600 0.25 0.1 12 mm3z5248b f2 18 7 17.1? 18.9 21 600 0.25 0.1 14 mm3z5249b n9 19 6.6 18. 05?19.95 23 600 0.25 0.1 14 mm3z5250b h2 20 6.2 19?21 25 600 0.25 0.1 15 mm3z5251b j2 22 5.6 20. 9?23.1 29 600 0.25 0.1 17 mm3z5252b k2 24 5.2 22. 8?25.2 33 600 0.25 0.1 18 mm3z5253b p9 25 5 23.75? 26.25 35 600 0.25 0.1 19 mm3z5254b m2 27 4.6 25. 65?28.35 41 600 0.25 0.1 21 mm3z5256b n2 30 4.2 28. 5?31.5 49 600 0.25 0.1 23 mm3z5257b p2 33 3.8 31. 35?34.65 58 700 0.25 0.1 25 mm3z5258b r2 36 3.4 34. 2?37.8 70 700 0.25 0.1 27 mm3z5259b x2 39 3.2 37. 05?40.95 80 800 0.25 0.1 30 mm3z5260b y2 43 3 40.85? 45.15 93 900 0.25 0.1 33 mm3z5261b z2 47 2.7 44. 65?49.35 105 1000 0.25 0.1 36 mm3z5262b a3 51 2.5 48. 45?53.55 125 1100 0.25 0.1 39 mm3z5263b b3 56 2.2 53. 2?58.8 150 1300 0.25 0.1 43 mm3z5265b c3 62 2 58.9? 65.1 185 1400 0.25 0.1 47 mm3z5266b d3 68 1.8 64. 6?71.4 230 1600 0.25 0.1 52 mm3z5267b e3 75 1.7 71. 25?78.75 270 1700 0.25 0.1 56 1) v z is tested with pulses (20 ms) mm3z5221b~mm3z5267b 2 date:2011/05 www.htsemi.com semiconductor jinyu
ambient temperature: ta ( c) o 0 25 100 150 0 100 200 300 power dissipation: ptot (mw) derating curve mm3z5221b~mm3z5267b 3 date:2011/05 www.htsemi.com semiconductor jinyu
package outline plastic surface mounted package; 2 leads sod-323 a mm unit b d ce h e b a d a c h e p 1.10 0.80 0.40 0.25 0.15 0.10 1.80 1.60 1.35 1.15 2.80 2.30 e p mm3z5221b~mm3z5267b 4 date:2011/05 www.htsemi.com semiconductor jinyu

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